Space shift between relaxed Si and strain-compensated SiGeC epitaxial layers
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چکیده
منابع مشابه
Co silicide formation on SiGeC/Si and SiGe/Si layers
The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate int...
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Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbon rich SiGe layers is fabricated in this work to examine self-interstitial generation in a region that is isolated from self-interstitial formation at the surface or in the silicon bulk. B...
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A.F. Vyatkin, V.S. Avrutin, N.F. Izyumskaya, V.K. Egorov, V.V. Starkov, V.I. Zinenko, Institute of Microelectronics Technology, RAS, 142432, Moscow distr., Chemogolovka, Russia LA. Smimova, Institute of Solid State Physics, RAS, 142432, Moscow distr.,Chernogolovka, Russia P.L.F. Hemment, A. Nejim, University of Surrey, Guilford, UK V.I. Vdovin, Institute for Chemical Problems of Microelectronic...
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The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzbur...
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The structure of AlGaAs, MnMgTe/CdTe and CdTe epitaxial layers deposited on GaAs substrates was studied by high-resolution X-ray diffractometry. The reciprocal lattice mapping and the rocking curve techniques were used for the samples aligned with either [110] or [ 110] direction perpendicular to the diffraction plane. Our results show that strains in the investigated samples were anisotropic. ...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 2005
ISSN: 0108-7673
DOI: 10.1107/s0108767305081699